공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-08-24
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
VishaySIRA12DP-T1-GE3
Single N-Channel 30 V 4.3 mOhm TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8
onsemiNTMFS4839NHT1G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 9.5A Ta 64A Tc 64A 5.7W 3.4ns
설명
유통업체에서 제공한 onsemi FDMS0310AS에 대한 설명입니다.
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R / MOSFET N-CH 30V 19A PT8
N-Channel PowerTrench® SyncFET™ 30V, 22A, 4.3mΩ
MOSFET Gaming/DT/Notebook/NVDC/Server
2.5W(Ta)，41W(Tc) 20V 3V@1mA 37nC@ 10 V 1individualNChannel 30V 4.3mΩ@ 19A,10V 19A，22A 2.28nF@15V QFN SMD mount 6mm*5mm*1.1mm
TAPE REEL / SINGLE PT8 N 30/20 SYNCFET
IC REG LINEAR POS ADJ 2A 10DFN
The FDMS0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight74 mg
Technical
Continuous Drain Current (ID)19 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4.3 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time3.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.28 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation41 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.5 W
Rds On Max4.3 mΩ
Rise Time3.9 ns
Schedule B8541290080
Turn-Off Delay Time25 ns
Turn-On Delay Time9 ns
Dimensions
Height1.1 mm