공급망
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-12-10
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2025-01-05
LTD Date2025-07-05
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
관련 부품
Diodes Inc.DMN2300UFL4-7
Small Signal Field-Effect Transistor, 2.11A I(D), N-Channel, Metal-oxide Semiconductor FET
Diodes Inc.DMP21D0UFB4-7B
DMP21D0UFB4 Series 20V 770 mA 495 mOhm P-Ch Enhancement Mode Mosfet-X2-DFN1006-3
onsemiNUS5531MTR2G
Small Signal MOSFET 12V 5.7A 40mOhm Single P-Channel DFN8 with Single Charging BJT
설명
유통업체에서 제공한 onsemi FDME1023PZT에 대한 설명입니다.
Dual P-Channel PowerTrench® MOSFET -20V, -2.6A, 142mΩ
Dual P-Channel 20 V 530 mOhm 7.7 nC 1.4 W PowerTrench SMT Mosfet - MICROFET-6
20V 2.6A 95m´Î@4.5V2.3A 1.4W 600mV@250uA 50pF@10V 2 P-Channel 305pF@10V 5.5nC@4.5V -55¡Í~+150¡Í@(Tj) MicroFET(1.6x1.6) MOSFETs ROHS
MOSFET, PP CH, 20V, 2.6A, MFET1.6X1.6; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-2.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.095ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited
This device is designed specifically as a single package solution for the battery charges switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageDFN
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight25.2 mg
Technical
Continuous Drain Current (ID)2.6 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance142 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationDual
Fall Time16 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance405 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-600 mV
Number of Channels2
Number of Elements2
PackagingTape and Reel
Power Dissipation1.4 W
Rds On Max142 mΩ
Rise Time4.8 ns
Schedule B8541290080
Threshold Voltage-600 mV
Turn-Off Delay Time33 ns
Turn-On Delay Time4.7 ns
Dimensions
Height550 µm
Length1.6 mm
Width1.6 mm