가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DMP21D0UFB4-7B | 13 | 5 | Cut Tape | ||||||||
| Avnet | DMP21D0UFB4-7B | 0 | 10K | 4d | ||||||||
| Future Electronics | DMP21D0UFB4-7B | 0 | 10K | Tape & Reel | ||||||||
| Arrow Electronics | DMP21D0UFB4-7B | 0 | 10K | |||||||||
| Farnell | DMP21D0UFB4-7B | 13 | 5 | Cut Tape | 15h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2011-05-09
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
Diodes Inc.DMN2250UFB-7B
Mosfet, N-Ch, 20V, 1.35A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN2250UFB-7B
Diodes Inc.DMN2500UFB4-7
Single N-Channel 20 V 0.7 Ohm 736.6 pC 0.46 W Silicon SMT Mosfet - XFDFN-3
설명
유통업체에서 제공한 Diodes Inc. DMP21D0UFB4-7B에 대한 설명입니다.
DMP21D0UFB4 Series 20V 770 mA 495 mOhm P-Ch Enhancement Mode Mosfet-X2-DFN1006-3
Power MOSFET, P Channel, 20 V, 770 mA, 0.495 ohm, X2-DFN1006, Surface Mount
Trans MOSFET P-CH 20V 1.17A Automotive 3-Pin X2-DFN T/R
Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.17A; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV; Power Dissipation:430mW; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: No
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageDFN
Contact PlatingGold
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1.17 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance495 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time18.5 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance80 pF
Max Operating Temperature150 °C
Max Power Dissipation990 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation99 mW
Rds On Max495 mΩ
Rise Time8 ns
Schedule B8541210080
Turn-Off Delay Time31.7 ns
Turn-On Delay Time7.1 ns
Dimensions
Height350 µm
Length1.05 mm
Width650 µm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책