가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | FDMC86259PCT-ND | 1,006 | 1 | Cut Tape | ||||||||
| Newark | FDMC86259P | 242 | 5 | Cut Tape | ||||||||
| Verical | FDMC86259P | 837 | 219 | |||||||||
| Rochester Electronics | FDMC86259P | 26,580 | 1d | |||||||||
| Onlinecomponents.com | FDMC86259P | 0 | 25 | Bulk |
공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-03-03
Lifecycle StatusNRND (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 3 days ago)
설명
유통업체에서 제공한 onsemi FDMC86259P에 대한 설명입니다.
P-Channel PowerTrench® MOSFET -150V, -13A, 107mΩ
Single P-Channel 150 V 2.3 W 32 nC PowerTrench Surface Mount Mosfet - POWER 33-8
Power Field-Effect Transistor, 3.2A I(D), 150V, 0.107ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
MOSFET, P-CH, -150V, -13A, POWER 33-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.087ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight152.7 mg
Technical
Continuous Drain Current (ID)3.2 A
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance107 mΩ
Drain to Source Voltage (Vdss)-150 V
Element ConfigurationSingle
Fall Time9.6 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.045 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation62 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.3 W
Rds On Max107 mΩ
Rise Time3.3 ns
Schedule B8541290080
Turn-Off Delay Time22 ns
Turn-On Delay Time12 ns
Dimensions
Height800 µm
Length3.4 mm
Width3.4 mm