공급망
Country of OriginPhilippines, Thailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-19
Lifecycle StatusProduction (Last Updated: 20 hours ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 20 hours ago)
관련 부품
VishaySI7232DN-T1-GE3
SI7232DN-T1-GE3 DUAL N-CHANNEL MOSFET TRANSISTOR,24 A,20V,8-PIN POWERPAK 1212
VishaySI3464DV-T1-GE3
MOSFET N-Channel 8A 20V 24mΩ@7.5A,4.5V 1.065nF@10V TSOP-6 SMD 3.05mm × 1.65mm × 1.1mm
Diodes Inc.DMN2022UFDF-7
Power MOSFET, N Channel, 20 V, 7.9 A, 0.015 ohm, U-DFN2020, Surface Mount
설명
유통업체에서 제공한 onsemi FDMA410NZ에 대한 설명입니다.
N-Channel PowerTrench® MOSFET, 1.5 V Specified, 20V, 9.5A, 23mΩ
FDMA410NZ Series 20 V 9.5 A 23 mOhm N-Ch PowerTrench® MOSFET - MicroFET-6
Power MOSFET, N Channel, 20 V, 9.5 A, 0.023 ohm, MicroFET, Surface Mount
onsemi N-Ch MOSFET, PowerTrench, Vds=20V 9.5A MicroFET 2x2, SMD, 6-Pin
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.
MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700mV; Power Dissipation Pd:900mW
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight30 mg
Technical
Continuous Drain Current (ID)9.5 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vds)20 V
Element ConfigurationSingle
Fall Time3.7 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance1.08 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs700 mV
Number of Channels1
Number of Elements1
Power Dissipation2.4 W
Rds On Max23 mΩ
Resistance23 MΩ
Rise Time3.9 ns
Schedule B8541290080
Turn-Off Delay Time27 ns
Turn-On Delay Time7.5 ns
Dimensions
Height800 µm
Length2 mm
Width2 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책