MOSFET, NN CH, 20V, MICROFET 2X2; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):37mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:700mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.