공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1999-02-01
Lifecycle StatusEOL (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
설명
유통업체에서 제공한 onsemi FDG6322C에 대한 설명입니다.
Dual MOSFET, Complementary N and P Channel, 25 V, 25 V, 220 mA, 220 mA, 2.6 ohm
Transistor: N+P-MOSFET; unipolar; 25V/-25V; 0.22A/-0.41A; 4/1.1ohm; 0.3W; -55+150 deg.C; SMD; SC70-6
Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N & P CH, 25V, 220MA, SC-70; Transistor Polarity:N and P Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):2.6ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Power Dissipation Pd:300mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SC-70; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSC
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)220 mA
Current Rating220 mA
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance4 Ω
Drain to Source Voltage (Vdss)25 V
Element ConfigurationDual
Fall Time8 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance9.5 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs850 mV
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation300 mW
Rds On Max4 Ω
Resistance4 Ω
Rise Time8 ns
Schedule B8541210080
Threshold Voltage850 mV
Turn-Off Delay Time55 ns
Dimensions
Height1.1 mm
Length2 mm
Width1.25 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책