공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-02-01
Lifecycle StatusEOL (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
관련 부품
VishaySI1553CDL-T1-GE3
SI1553CDL-T1-GE3 Dual N/P-channel MOSFET Transistor, 0.4A, 0.7A, 20V, 6-Pin SOT-363
설명
유통업체에서 제공한 onsemi FDG6304P에 대한 설명입니다.
Transistor MOSFET Array Dual P-CH 25V 0.41A 6-Pin SC-70 T/R
Avnet Japan
Dual P-Channel Digital FET -25V, 0.41A, 1.1Ω
Dual MOSFET, P Channel, 25 V, 25 V, 410 mA, 410 mA, 0.85 ohm
Dual P-Channel 25 V 1.1 Ohm Surface Mount Digital FET - SC70-6
Trans MOSFET P-CH 25V 0.41A 6-Pin SC-88 T/R
Small Signal Field-Effect Transistor, 0.41A I(D), 25V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
FDG6304P,006, PLASTIC MOLDED S C70-6 LEAD PACKAGE, SMD<AZ
25V DUAL P-CH. FET, 1.1 O, SC7
IC FET DGTL P-CHAN DUAL SC70-6
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-25V; Continuous Drain Current, Id:-0.41A; On Resistance, Rds(on):1.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-SC-70 ;RoHS Compliant: Yes
These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
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- ON SEM
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- ONSEMIC
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- OSC
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- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
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- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
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기술 사양
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)410 mA
Current Rating-410 mA
Drain to Source Breakdown Voltage-25 V
Drain to Source Resistance1.1 Ω
Drain to Source Voltage (Vdss)-25 V
Dual Supply Voltage-25 V
Element ConfigurationDual
Fall Time8 ns
Gate to Source Voltage (Vgs)-8 V
Input Capacitance62 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs-820 mV
Number of Channels2
Number of Elements2
Power Dissipation300 mW
Rds On Max1.1 Ω
Resistance1.1 Ω
Rise Time8 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-820 mV
Turn-Off Delay Time55 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)-25 V
Dimensions
Height1.1 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책