관련 부품
InfineonIRFR9120NTRPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.48Ohm;ID -6.6A;D-Pak (TO-252AA);PD 40W
InfineonBSP296NH6327XTSA1
Power MOSFET, N Channel, 100 V, 1.2 A, 600 Milliohms, SOT-223, 4 Pins, Surface Mount
설명
유통업체에서 제공한 onsemi FDG361N에 대한 설명입니다.
100V/20V, 500/550MO, NCH, SINGLE, SC70-6, 600A GOX, PTI
Trans MOSFET N-CH 100V 0.6A 6-Pin SC-70 T/R
Small Signal Field-Effect Transistor, 0.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
420mW(Ta) 4V@ 250µA 5nC@ 10V 1individualNChannel 100V 500mΩ@ 600mA,10V 153pF@50V SC-70-6，SC-88 SMD mount
MOSFETs N-Ch PowerTrench Specified 100V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)600 mA
Current Rating600 mA
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance550 mΩ
Drain to Source Voltage (Vds)100 V
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance153 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation420 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation380 mW
Rds On Max500 mΩ
Rise Time4 ns
Turn-Off Delay Time11 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)100 V
Dimensions
Height1.1 mm