데이터시트 및 문서
onsemi FDG311N에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.
공식 데이터시트5년 전
공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-01-03
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2020-11-13
LTD Date2021-05-13
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 weeks ago)
관련 부품
설명
유통업체에서 제공한 onsemi FDG311N에 대한 설명입니다.
N-Channel PowerTrench® MOSFET, 2.5V Specified, 1.9 A, 115 mΩ
750mW(Ta) 8V 1.5V@ 250µA 4.5nC@ 4.5 V 1individualNChannel 20V 115mΩ@ 1.9A,4.5V 1.9A 270pF@10V SC-70-6，SC-88 SMD mount 2mm*1.25mm*1.1mm
Modular Connectors - Jacks With Magnetics 1 (Unlimited) RJ45 1 Solder 90° Angle (Right) Shielded, EMI Finger Through Hole Down 10/100/1000 Base-T, AutoMDIX CONN MAGJACK 1PORT 1000 BASE-T
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)1.9 A
Current Rating1.9 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance105 mΩ
Drain to Source Voltage (Vds)20 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance270 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs900 mV
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation480 mW
Rds On Max115 mΩ
Rise Time9 ns
Schedule B8541210080
Threshold Voltage900 mV
Turn-Off Delay Time10 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)20 V
Dimensions
Height1.1 mm
Length2 mm
Width1.25 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책