공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1999-02-01
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2020-11-13
LTD Date2021-05-13
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
관련 부품
설명
유통업체에서 제공한 onsemi FDG312P에 대한 설명입니다.
P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ
750mW(Ta) 8V 1.5V@ 250µA 5nC@ 4.5 V 1individualPChannel 20V 180mΩ@ 1.2A,4.5V 1.2A 330pF@10V SC-70-6，SC-88 SMD mount 2mm*1.25mm*1.1mm
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):187mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.2A; Package / Case:SC70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:8V
This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight28 mg
Technical
Continuous Drain Current (ID)1.2 A
Current Rating-1.2 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance330 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation480 mW
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time12 ns
Schedule B8541210080
Threshold Voltage900 mV
Turn-Off Delay Time16 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.1 mm
Length2 mm
Width1.25 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책