onsemi FDFS6N303
$ 0.345
Obsolete
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-12-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-03-09
LTD Date2009-09-09
설명
유통업체에서 제공한 onsemi FDFS6N303에 대한 설명입니다.
Tape & Reel (TR) Surface Mount N-Channel MOSFET (Metal Oxide) Mosfet Transistor 6A Ta 6A 2W 6ns
30V N-Channel MOSFET with Schottky Diode
Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
30V/20V, 35/50MO, SINGLE, SO8, 400A GOX, 10 CELL
MOSFET, N, SCHOTTKY, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Forward Current If(AV):5mA; Forward Voltage VF Max:500mV; Package / Case:SOIC; Power Dissipation Pd:2mW; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
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기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)6 A
Current Rating6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation2 W
Rds On Max35 mΩ
Rise Time12 ns
Threshold Voltage1.7 V
Turn-Off Delay Time13 ns
Voltage Rating (DC)30 V