공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-05-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-11-04
LTD Date2010-05-04
관련 부품
InfineonIPD90N04S404ATMA1
Trans MOSFET N-CH 40V 90A Automotive 3-Pin(2+Tab) DPAK T/R / OptiMOS-T2 Power-Transistor
InfineonIPD90N04S405ATMA1
40V, N-Ch, 5.2 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS
InfineonIPD50N04S308ATMA1
40V, N-Ch, 7.5 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T, PG-TO252-3, RoHS
VishaySQD50P04-13L_GE3
SQD50P04-13L Series P-Channel 40 V 13 mOhms 83 W SMT Power Mosfet - TO-252-3
설명
유통업체에서 제공한 onsemi FDD8444L에 대한 설명입니다.
Trans MOSFET N-CH 40V 16A 3-Pin(2+Tab) TO-252 T/R
N-Channel PowerTrench® MOSFET | MOSFET N-CH 40V 50A DPAK
Power Field-Effect Transistor, 16A I(D), 40V, 0.0107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:50A; On Resistance, Rds(on):3.5mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)16 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance10.7 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time19.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.53 nF
Max Operating Temperature175 °C
Max Power Dissipation153 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation153 W
Rds On Max5.2 mΩ
Rise Time46 ns
Turn-Off Delay Time42 ns
Turn-On Delay Time18.7 ns