공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-06-29
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-02-17
LTD Date2021-08-17
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
관련 부품
STMicroelectronicsSTD20NF06LT4
Trans MOSFET N-CH 60V 24A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 24A DPAK
STMicroelectronicsSTD15NF10T4
N-Channel 100V - 0.06Ohm - 23A - DPAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
설명
유통업체에서 제공한 onsemi FDD6530A에 대한 설명입니다.
N-Channel PowerTrench® MOSFET, 20V, 21A, 32mΩ
Single N-Channel 20 V 48 mOhm 9 nC 33 W PowerTrench SMT Mosfet - TO-252-3
Power Field-Effect Transistor, 21A I(D), 20V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N-CH, 21A, 20V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 900mV; Po
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)21 A
Current Rating21 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance32 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance710 pF
Max Operating Temperature175 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation33 W
Rds On Max32 mΩ
Rise Time7 ns
Schedule B8541290080
Turn-Off Delay Time18 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)20 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm