onsemi FDC6321C

Transistor MOSFET N P Channel 25 Volt 0.68 Amp-0.46 Amp 6-Pin SuperSOT Tape and Reel

Dual N/P Channel 25 V 0.33 O 0.7 W Surface Mount Digital Fet - SOT-23-6

onsemi N/P-Ch MOSFET Vds=25V 460mA/680mA SOT-23 SMD 6-Pin

Small Signal Field-Effect Transistor, 0.00068A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Chip Resistor - Surface Mount 1kOhm 0805 (2012 Metric) ±5% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 1K OHM 5% 1/2W 0805

These dual N & P Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this dual digital FET can replace several digital transistors with different bias resistors.

MOSFET, DUAL, NP, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:460mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:900mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:2.7A; Cont Current Id P Channel:1.6A; Current Id Max:680mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance N Channel Max:680mohm; On State Resistance P Channel Max:450mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:900mW; Power Dissipation Pd:900mW; Pulse Current Idm:1.5A; SMD Marking:FDC6321C; Termination Type:SMD; Uni / Bi Directional Polarity:NP; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V