유통업체에서 제공한 onsemi FDC6304P에 대한 설명입니다.
Transistor MOSFET Positive Channel 25 Volt 0.46A 6-Pin SuperSOT T/R
900mW 8V 1.5V@ 250¦ÌA 1.5nC@ 4.5V 2P 25V 1.1¦¸@ 500mA,4.5V 460mA 62pF@10V SOT 2.9mm*1.6mm*1.1mm
Dual P-Channel Digital FET -25V, -0.46A, 1.1Ω
Trans MOSFET P-CH 25V 0.46A 6-Pin TSOT-23 T/R
Dual P-Channel 25 V 1.1 O Surface Mount Digital FET - SSOT-6
DUAL P CHANNEL MOSFET, -25V, SUPER SOT-6
Small Signal Field-Effect Transistor, 0.46A I(D), 25V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
25V DUAL P-CH. FET, 1.1 O, SSO
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-25V; Continuous Drain Current, Id:-0.46A; On Resistance, Rds(on):1.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SuperSOT-6 ;RoHS Compliant: Yes
These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.