가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FDBL86561-F085 | 84,000 | 2K | 1d | ||||||||
| Newark | FDBL86561-F085 | 7,062 | 1 | Cut Tape | ||||||||
| DigiKey | FDBL86561-F085CT-ND | 2,722 | 1 | Cut Tape | ||||||||
| Flip Electronics | FDBL86561-F085 | 14,000 | 17h | |||||||||
| Onlinecomponents.com | FDBL86561-F085 | 0 | 500 | Bulk |
공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-01-13
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonIRFS7530TRL7PP
Trans MOSFET N-CH Si 60V 338A 7-Pin(6+Tab) D2PAK T/R / MOSFET N CH 60V 240A D2PAK
InfineonIPT007N06NATMA1
375KW 20V 3.3V 216nC@ 10V 2N 60V 750¦Ì¦¸@ 10V 300A 16nF@ 30V HSOF-8,PQFN-8 , 9.9mm*10.38m*2.3mm
설명
유통업체에서 제공한 onsemi FDBL86561-F085에 대한 설명입니다.
N-Channel PowerTrench® MOSFET, 60V, 300A, 1.1mΩ
FDBL86561 Series 60 V 300 A 1.1 mOhm N-Channel PowerTrench® MOSFET - MO-299A
Trans MOSFET N-CH 60V 300A Automotive 9-Pin(8+Tab) TO-LL T/R
Trans MOSFET N-CH 60V 300A 8-Pin PSOF T/R
N-Channel Power Trench Mosfet / Tape Reel
场效应管, MOSFET, AEC-Q101, N沟道, 60V, 300A, 429W;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals2
Weight850.0521 mg
Technical
Continuous Drain Current (ID)300 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.2 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time41 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.65 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation429 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation429 W
Rds On Max1.1 mΩ
Rise Time61 ns
Turn-Off Delay Time80 ns
Turn-On Delay Time45 ns
Dimensions
Height2.4 mm