공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-04
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
설명
유통업체에서 제공한 onsemi FDB8832에 대한 설명입니다.
N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ
FDB8832 Series 30V 80 A 2.1 mOhm N-Ch. Logic Level PowerTrench Mosfet - TO-263AB
Power Field-Effect Transistor, 34A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:11400pF; Current Id Max:80A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:80A; Reverse Recovery Time trr Typ:59ns; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V
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기술 사양
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins2
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)34 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.2 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time38 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance11.4 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.6 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation300 W
Rds On Max1.9 mΩ
Reverse Recovery Time59 ns
Rise Time73 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.6 V
Turn-Off Delay Time54 ns
Turn-On Delay Time24 ns
Dimensions
Height5.08 mm
Length10.67 mm
Width11.33 mm