공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-01-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-09-11
LTD Date2014-03-11
관련 부품
InfineonIPB011N04NGATMA1
TRANSISTOR, OPTIMOS 3 POWER MOSFET, N-CHANNEL, NORMAL LEVEL, 40V, 180A, TO263-7
설명
유통업체에서 제공한 onsemi FDB8442에 대한 설명입니다.
Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R
N CHANNEL MOSFET, 40V, 80A TO-263AB, FULL REEL
TRANS MOSFET N-CH 40V 80A 3PIN TO-263AB
Power Field-Effect Transistor, 80A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET N-CH 40V 28A/80A TO263AB
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.1mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:254W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Package / Case:D2-PAK; Power Dissipation Pd:254W; Power Dissipation Pd:254W; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:2.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
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- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins2
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)28 A
Current Rating80 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.9 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationSingle
Fall Time17.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance12.2 nF
Max Operating Temperature175 °C
Max Power Dissipation254 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs2.9 V
Number of Elements1
Power Dissipation254 W
Rds On Max2.9 mΩ
Rise Time19.3 ns
TerminationSMD/SMT
Threshold Voltage2.9 V
Turn-Off Delay Time57 ns
Turn-On Delay Time19.5 ns
Voltage Rating (DC)40 V