공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-03-11
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
STMicroelectronicsSTH315N10F7-6
Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET
InfineonAUIRFS3107-7P
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
STMicroelectronicsSTH310N10F7-6
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
InfineonIRFS3107TRL7PP
N CH POWER MOSFET. HEXFET, 75V, 260A, D2PAK; Transistor Polarity:N Channel; Cont
설명
유통업체에서 제공한 onsemi FDB0260N1007L에 대한 설명입니다.
N-Channel PowerTrench® MOSFET 100V, 200A, 2.6mΩ
3.8W(Ta)，250W(Tc) 20V 4V@ 250µA 118nC@ 10V 1individualNChannel 100V 2.6mΩ@ 27A,10V 200A 8.545nF@50V TO-263-7 SMD mount 10.2mm*9.4mm*4.7mm
MOSFET, N-CH, 100V, 200A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins7
Number of Terminals6
Weight1.312 g
Technical
Continuous Drain Current (ID)200 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance2.6 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.545 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation250 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.8 W
Rds On Max2.6 mΩ
Schedule B8541290080
Threshold Voltage2.8 V
Turn-Off Delay Time51 ns
Turn-On Delay Time30 ns
Dimensions
Height4.9 mm