유통업체에서 제공한 onsemi FDA18N50에 대한 설명입니다.
N-Channel Power MOSFET, UniFETTM, 500 V, 19 A, 265 mΩ, TO-3P
N-Channel 500 V 265 mOhm Flange Mount UniFET Mosfet - TO-3PN
500 V, 19 A, 265 MILLI OHM N-CHANNEL UNIFET MOSFET Power Field-Effect Transistor, 19A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, TO-3PN; Transistor Polarity: N Channel; Continuous Drain Current Id: 19A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.265ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation
MOSFET, N, TO-3PN; Transistor type:Enhancement; Voltage, Vds typ:500V; Current, Id cont:19A; Resistance, Rds on:0.265ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-3PN; Current, Idm pulse:76A; Pins, RoHS Compliant: Yes
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.