가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TTI Europe | IRFB20N50KPBF | 0 | 50 | Tube | 12h | |||||||
| element14 APAC | IRFB20N50KPBF. | 0 | 1 | 2h | ||||||||
| Farnell | IRFB20N50KPBF. | 0 | 1 | 8h | ||||||||
| Microchip USA | IRFB20N50KPBF | 2,868 | 600 | Tube | 2d | |||||||
| Weyland Electronics Group Pte. Ltd. | IRFB20N50KPBF | 553 | 1 | Tape & Reel | 1d |
공급망
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-02-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
설명
유통업체에서 제공한 Vishay IRFB20N50KPBF에 대한 설명입니다.
Single N-Channel 500 V 0.29 Ohms Flange Mount Power Mosfet - TO-220AB
MOSFET N-CH 500V 20A TO-220AB | Siliconix / Vishay IRFB20N50KPBF
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB
500V 20A 280W 250m´Î@10V12A 5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power MOSFET Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 500V, 20A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.21Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
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- VISAHY
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- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
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- Vishay Sfernice
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기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.87 nF
Max Operating Temperature150 °C
Max Power Dissipation280 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation280 W
Rds On Max250 mΩ
Resistance210 mΩ
Rise Time74 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time45 ns
Turn-On Delay Time22 ns
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm