공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-01-26
Lifecycle StatusProduction (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 days ago)
관련 부품
InfineonIRFB7730PBF
Infineon N-Channel Enhancement MOSFET, HEXFET Series, Vds=75V, 246A, TO-220AB, TH, 3-Pin
InfineonIRFB3006PBF
Transistor: N-MOSFET; unipolar; 60V; 270A; 2.1mohm; 375W; -55+175 deg.C; THT; TO220
InfineonIRFSL3107PBF
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
설명
유통업체에서 제공한 onsemi FDA032N08에 대한 설명입니다.
N-Channel MOSFET, PowerTrench®, 75V, 235A, 3.2mΩ
N-Channel 75 V 235 A 3.2 mOhm Flange Mount PowerTrench® Mosfet - TO-3PN
375W(Tc) 20V 4.5V@250µA 220nC@10V 1 N-Ch 75V 3.2mΩ@75A,10V 120A 15.16nF@25V TO-3PN TH 23.8mm H
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-3P Tube
Power Field-Effect Transistor, 120A I(D), 75V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Fet 75V 3.2 Mohm To3P Rohs Compliant: Yes
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance3.2 mΩ
Drain to Source Voltage (Vds)75 V
Element ConfigurationSingle
Fall Time121 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance15.16 nF
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation375 W
Rds On Max3.2 mΩ
Resistance3.2 MΩ
Rise Time191 ns
Schedule B8541290080
Turn-Off Delay Time335 ns
Turn-On Delay Time230 ns