공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-11-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTF33N65M2
N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in TO-220FP package
VishaySIHA25N50E-E3
Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronicsSTF34N65M5
N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in TO-220FP package
InfineonIPA60R125CPXKSA1
IPA60R125CP Series 650 V 25 A 0.125 Ohm CoolMos Power Transistor - TO-220-3
설명
유통업체에서 제공한 Infineon IPA65R150CFDXKSA1에 대한 설명입니다.
Trans MOSFET N-CH 700V 22.4A 3-Pin(3+Tab) TO-220 Full-Pack
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO220-3, RoHS
Infineon SCT
Mosfet, N-Ch, 650V, 22.4A, To-220Fp-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22.4A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Infineon IPA65R150CFDXKSA1
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)22.4 A
Drain to Source Breakdown Voltage700 V
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time5.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.34 nF
Max Dual Supply Voltage650 V
Max Operating Temperature150 °C
Max Power Dissipation34.7 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance150 mΩ
Package Quantity500
Power Dissipation34.7 W
Rds On Max150 mΩ
Rise Time7.6 ns
Schedule B8541290080
Turn-Off Delay Time52.8 ns
Turn-On Delay Time12.4 ns