공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
관련 부품
STMicroelectronicsSTP22NM60N
N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220
STMicroelectronicsSTP15NM60ND
N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-220 package
STMicroelectronicsSTP18N65M5
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in TO-220 package
InfineonIPP60R199CPXKSA1
139W 20V 2.5V 32nC@ 10V 1N 650V 199m¦¸@ 10V 16A 1.52nF@ 100V TO-220-3 10mm*4.4mm*15.65mm
설명
유통업체에서 제공한 onsemi FCP13N60N에 대한 설명입니다.
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 13 A, 258 mΩ, TO-220
Single N-Channel 600 V 0.258 Ohm 39.5 nC 33.8 W Silicon Mosfet - TO-220-3
600 V, 13 A, 258 MILLI OHM N-CHANNEL SUPREMOS MOSFET Power Field-Effect Transistor, 13A I(D), 600V, 0.258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET,N CH,600V,13A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.244ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:116W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance258 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time9.8 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.765 nF
Max Operating Temperature150 °C
Max Power Dissipation116 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation116 W
Rds On Max258 mΩ
Rise Time10.6 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time45 ns
Turn-On Delay Time14.5 ns
Dimensions
Height9.4 mm
Length10.67 mm
Width4.83 mm