공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2016-02-12
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
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N-channel 650 V, 0.067 Ohm, 35 A MDmesh M5 Power MOSFET in TO-220 package
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STMicroelectronicsSTP36N55M5
N-channel 550 V, 0.06 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-220 package
설명
유통업체에서 제공한 onsemi FCP067N65S3에 대한 설명입니다.
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-220
Power Field-Effect Transistor, 44A I(D), 650V, 0.067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 650V, 44A, TO-220-3L; Transistor Polarity: N Channel; Continuous Drain Current Id: 44A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.059ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V;
SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advancedtechnology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dtrate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)44 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance67 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.09 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation312 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation312 W
Rds On Max67 mΩ
Schedule B8541290080
Threshold Voltage4.5 V
Turn-Off Delay Time89 ns
Turn-On Delay Time26 ns
Dimensions
Height20.4 mm