대체 부품
Price @ 1000
$ 3.06
$ 3.28
Stock
72,658
222,260
Authorized Distributors
1
5
Mount
Through Hole
Through Hole
Case/Package
TO-220
TO-220
Drain to Source Voltage (Vds)
650 V
650 V
Continuous Drain Current (ID)
31.2 A
31.2 A
Threshold Voltage
-
-
Rds On Max
110 mΩ
110 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
277.8 W
277.8 W
Input Capacitance
3.24 nF
3.24 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-15
Lifecycle StatusObsolete (Last Updated: 8 months ago)
관련 부품
InfineonIPP65R099C6XKSA1
MOSFET N-CH 650V 38A TO220-3 / N-Channel 650 V 38A (Tc) 278W (Tc) Through Hole PG-TO220-3
STMicroelectronicsSTP45N65M5
N-channel 650 V, 0.067 Ohm, 35 A MDmesh M5 Power MOSFET in TO-220 package
InfineonIPP65R095C7XKSA1
128W 20V 4V 45nC@ 10V 1N 650V 95m¦¸@ 10V 24A 2.14nF@ 400V TO-220 10mm*4.4mm*15.65mm
STMicroelectronicsSTP38N65M5
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh m5 Power MOSFET in TO-220 package
STMicroelectronicsSTP34N65M5
N-channel 650 V, 0.09 Ohm, 28 A MDmesh(TM) V Power MOSFET in TO-220 package
InfineonIPP60R099CPXKSA1
MOSFET N-Ch 600V 31A 255W(Tc) 20V 3.5V@1.2mA 80nC@10V 99mΩ@18A,10V 2.8nF@100V TO-220 TH 9.45mm H
설명
유통업체에서 제공한 Infineon IPP65R110CFDXKSA1에 대한 설명입니다.
Trans MOSFET N-CH 650V 31.2A 3-Pin(3+Tab) TO-220 Tube
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO220-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N-Ch, 650V, 31.2A, 277.8W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:31.2A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IPP65R110CFDXKSA1
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)31.2 A
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vds)650 V
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.24 nF
Max Dual Supply Voltage650 V
Max Operating Temperature150 °C
Max Power Dissipation277.8 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance110 mΩ
Package Quantity500
Power Dissipation277.8 W
Rds On Max110 mΩ
Rise Time11 ns
Schedule B8541290080
Turn-Off Delay Time68 ns
Turn-On Delay Time16 ns