대체 부품
Price @ 1000
$ 3.06
$ 3.28
Stock
42,647
205,158
Authorized Distributors
1
5
Mount
Through Hole
Through Hole
Case/Package
TO-220
TO-220
Drain to Source Voltage (Vds)
650 V
650 V
Continuous Drain Current (ID)
31.2 A
31.2 A
Threshold Voltage
-
-
Rds On Max
110 mΩ
110 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
277.8 W
277.8 W
Input Capacitance
3.24 nF
3.24 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-15
Lifecycle StatusObsolete (Last Updated: 9 months ago)
관련 부품
InfineonIPP65R099C6XKSA1
MOSFET N-CH 650V 38A TO220-3 / N-Channel 650 V 38A (Tc) 278W (Tc) Through Hole PG-TO220-3
STMicroelectronicsSTP45N65M5
N-channel 650 V, 0.067 Ohm, 35 A MDmesh M5 Power MOSFET in TO-220 package
InfineonIPP65R095C7XKSA1
MOSFET N-CH 650V 24A TO220-3 N-Channel 650 V 24A (Tc) 128W (Tc) Through Hole PG-TO220-3
STMicroelectronicsSTP38N65M5
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh m5 Power MOSFET in TO-220 package
STMicroelectronicsSTP34N65M5
N-channel 650 V, 0.09 Ohm, 28 A MDmesh(TM) V Power MOSFET in TO-220 package
InfineonIPP60R099CPXKSA1
MOSFET N-CH 650V 31A TO220-3 N-Channel 650 V 31A (Tc) 255W (Tc) Through Hole PG-TO220-3
설명
유통업체에서 제공한 Infineon IPP65R110CFDXKSA1에 대한 설명입니다.
MOSFET N-CH 700V 31.2A TO220-3 N-Channel 700 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3
Trans MOSFET N-CH 650V 31.2A 3-Pin(3+Tab) TO-220 Tube
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO220-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N-Ch, 650V, 31.2A, 277.8W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:31.2A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IPP65R110CFDXKSA1
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
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- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)31.2 A
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vds)650 V
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.24 nF
Max Dual Supply Voltage650 V
Max Operating Temperature150 °C
Max Power Dissipation277.8 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance110 mΩ
Package Quantity500
Power Dissipation277.8 W
Rds On Max110 mΩ
Rise Time11 ns
Schedule B8541290080
Turn-Off Delay Time68 ns
Turn-On Delay Time16 ns