onsemi FCH47N60N

N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 47 A, 62 mΩ, TO-247

FCH47N60N Series 600 V 47 A 62 mOhm N-Channel SuperMos Mosfet - TO-247-3

Power Field-Effect Transistor, 47A I(D), 600V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

MOSFET,N CH,600V,47A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.0515ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:368W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.