공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
관련 부품
STMicroelectronicsSTW77N65M5
N-channel 650 V, 0.033 Ohm, 69 A MDmesh M5 Power MOSFET in TO-247 package
STMicroelectronicsSTW70N60DM2
N-channel 600 V, 0.032 Ohm typ., 67 A MDmesh DM2 Power MOSFET in TO-247 package
설명
유통업체에서 제공한 STMicroelectronics STY60NM50에 대한 설명입니다.
N-Channel 500V - 0.045 Ohm - 60A Max247(TM) Zener-Protected MDmesh(TM) Power MOSFET
Transistor MOSFET N-CH 500V 60A 3-Pin (3+Tab) Max247 Tube
MOSFET, N, MAX-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)60 A
Current Rating60 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance7.5 nF
Max Operating Temperature150 °C
Max Power Dissipation450 W
Min Breakdown Voltage500 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation560 W
Rds On Max50 mΩ
Resistance50 mΩ
Rise Time58 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-On Delay Time51 ns
Voltage Rating (DC)500 V
Dimensions
Height6.35 mm
Length25.4 mm
Width6.35 mm