onsemi FCD850N80Z

N-Channel Power MOSFET, SUPERFET® II, 800 V, 6 A, 850 mΩ, DPAK

MOSFET N-CH 800V 6A DPAK / isc N-Channel MOSFET Transistor

Power Field-Effect Transistor, 6A I(D), 800V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

75W(Tc) 20V 4.5V@ 600¦ÌA 29nC@ 10 V 1individualNChannel 800V 850m¦¸@ 3A,10V 6A 1.315nF@100V TO-252AA SMD mount 2.52mm(height)

MOSFET, N-CH, 800V, 6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.71ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Pow

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.