onsemi FCD7N60TM

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK
$ 1.4
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Newark
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VericalFCD7N60TM2,040223
Rochester ElectronicsFCD7N60TM2,040
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DigiKey
3
FCD7N60TMCT-ND6,5581Cut Tape
Onlinecomponents.comFCD7N60TM0625Bulk

데이터시트 및 문서

onsemi FCD7N60TM에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

Newark

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Fairchild Semiconductor

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공급망

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-07-12
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

관련 부품

onsemiFCD600N60Z
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ, DPAK
세부 사항
STMicroelectronicsSTD8NM60ND
Mosfet Transistor, N Channel, 7 A, 600 V, 0.59 Ohm, 10 V, 4 V Rohs Compliant: Yes
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N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, DPAK
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STMicroelectronicsSTD8N65M5
N-channel 650 V, 0.56 Ohm typ., 7 A MDmesh M5 Power MOSFET in DPAK package
세부 사항
STMicroelectronicsSTD10NM65N
N-channel 650 V, 0.43 Ohm, 9 A, DPAK second generation MDmesh(TM) Power MOSFET
세부 사항
VishaySIHD7N60E-GE3
VISHAY SIHD7N60E-GE3 Power MOSFET, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V
세부 사항

설명

유통업체에서 제공한 onsemi FCD7N60TM에 대한 설명입니다.

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, DPAK
onsemi
N-Channel 600 V 0.6 Ohm Surface Mount SuperFET Mosfet - TO-252-3
Future Electronics
Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IHS
MOSFET, N, 600V D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:7A; Package / Case:DPAK; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:21A; Termination Type:SMD; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
element14 APAC
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Fairchild Semiconductor

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  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
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