공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-10-10
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
VishaySIHD7N60E-GE3
VISHAY SIHD7N60E-GE3 Power MOSFET, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V
STMicroelectronicsSTD10N60M2
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in DPAK package
STMicroelectronicsSTD11NM50N
N-channel 500 V, 0.40 Ohm typ., 8.5 A MDmesh II Power MOSFET in a DPAK package
설명
유통업체에서 제공한 onsemi FCD600N60Z에 대한 설명입니다.
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ, DPAK
Power Field-Effect Transistor, 7.4A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 600V, 7.4A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.51ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)7.4 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.12 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation89 W
Rds On Max600 mΩ
Rise Time7 ns
Schedule B8541290080
Turn-Off Delay Time39 ns
Turn-On Delay Time13 ns
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm