공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-07-26
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2020-01-16
LTD Date2020-07-16
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
관련 부품
STMicroelectronicsSTB28N60M2
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package
STMicroelectronicsSTB27NM60ND
N-channel 600 V, 0.13 Ohm, 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK
STMicroelectronicsSTB28NM60ND
N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
VishaySIHB23N60E-GE3
MOSFET N-CH 600V 23A D2PAK / N-Channel 600 V 23A (Tc) 227W (Tc) Surface Mount D²PAK (TO-263)
InfineonIPB60R190P6ATMA1
MOSFET N-CH 600V 20.2A D2PAK N-Channel 600 V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263-3
설명
유통업체에서 제공한 onsemi FCB20N60F-F085에 대한 설명입니다.
Trans MOSFET N-CH 600V 20A Automotive 3-Pin(2+Tab) TO-263AB T/R
Power Field-Effect Transistor, 20A I(D), 600V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
405W(Tc) 30V 5V@ 250µA 102nC@ 10 V 1individualNChannel 600V 195mΩ@ 20A,10V 20A 2.035nF@25V D2PAK，TO-263 SMD mount 10.67mm*9.65mm*4.83mm
SuperFETTM is, Fairchild’s proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance andlower gate charge performance.This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, andwithstand extreme dv/dt rate and higher avalanche energy.Consequently, SuperFET is very suitable for various AC/DCpower conversion in switching mode operation for systemminiaturization and higher efficiency
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance195 mΩ
Drain to Source Voltage (Vds)600 V
Element ConfigurationSingle
Fall Time42 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.035 nF
Max Operating Temperature150 °C
Max Power Dissipation405 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation405 W
Rds On Max195 mΩ
Rise Time66 ns
Turn-Off Delay Time211 ns
Turn-On Delay Time43 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCAffected
RoHSCompliant
규정 준수 정책