대체 부품
Price @ 1000
$ 0.076
$ 0.099
$ 0.099
Stock
22,931,715
9,335,618
9,335,618
Authorized Distributors
6
6
6
Mount
-
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
-50 V
-50 V
-50 V
Continuous Drain Current (ID)
130 mA
130 mA
130 mA
Threshold Voltage
-2 V
-1.7 V
-1.7 V
Rds On Max
10 Ω
10 Ω
10 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
225 mW
360 mW
360 mW
Input Capacitance
30 pF
73 pF
73 pF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-01-15
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemi2N7002LT1G
MOSFET; N-Ch; VDSS 60VDC; RDS(ON) 7.5 Ohms; ID +/-115mA; SOT-23 (TO-236); PD 225mW; -55
InfineonBSS84PH6433XTMA1
BSS84P Series 60 V 8 Ohm P-Channel SIPMOS® Small-Signal-Transistor - SOT-23-3
Diodes Inc.2N7002E-7-F
Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 0.25A SOT23-3
설명
유통업체에서 제공한 onsemi BSS84LT1G에 대한 설명입니다.
BSS84L: Small Signal MOSFET 50V 130mA 10 Ohm Single P-Channel SOT-23 Logic Level
ON SEMICONDUCTOR - BSS84LT1G - Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-23, Surface Mount
P-Channel Power MOSFET, Logic Level, -50 V, -130mA, 10Ω
MOSFET, POWER, P-CH, VDSS 50VDC, RDS(ON) 5 OHMS, ID 130MA, SOT-23 (TO-236),PD 225MW
POWER MOSFET SINGLE P-CHANNEL SOT-23 Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
PFET SOT23 50V 130MA 10.0; Transistor Polarity: P Channel; Continuous Drain Current Id: 130µA; Drain Source Voltage Vds: -50V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissip
P Channel Mosfet, -50V, 130Ma, Sot-23; Transistor, Polaridad:Canal P; Intensidad Drenador Continua Id:130Ma; Tensión Drenaje-Fuente Vds:50V; Resistencia De Activación Rds(On):10Ohm; Tensión Vgs De Medición Rds(On):5V |Onsemi BSS84LT1G
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -130 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 10 / Gate-Source Voltage V = -5 / Fall Time ns = 1.7 / Rise Time ns = 9.7 / Turn-OFF Delay Time ns = 1.2 / Turn-ON Delay Time ns = 3.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 225
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)130 mA
Current Rating-130 mA
Drain to Source Breakdown Voltage-50 V
Drain to Source Resistance10 Ω
Drain to Source Voltage (Vdss)-50 V
Element ConfigurationSingle
Fall Time1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance30 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation225 mW
Rds On Max10 Ω
Resistance10 Ω
Rise Time1 ns
Schedule B8541210080
Threshold Voltage-2 V
Turn-Off Delay Time12 ns
Turn-On Delay Time3.6 ns
Voltage Rating (DC)-50 V
Dimensions
Height1.11 mm
Length3.0226 mm
Width1.397 mm
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책