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이 부품
대체 부품
Price @ 1000
$ 0.032
$ 0.078
Stock
390,181
594,552
Authorized Distributors
4
6
Mount
Surface Mount
-
Case/Package
SOT-23
-
Polarity
PNP
-
Collector Emitter Breakdown Voltage
32 V
-
Max Collector Current
100 mA
200 mA
Transition Frequency
-
100 MHz
Collector Emitter Saturation Voltage
-550 mV
550 mV
hFE Min
80
80
Power Dissipation
350 mW
-
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-07-19
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2020-01-16
LTD Date2020-07-16
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
관련 부품
Diodes Inc.BC858B-7-F
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
Diodes Inc.BC858A-7-F
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
Diodes Inc.MMBT4403-7-F
Bipolar (BJT) Single Transistor, PNP, -40 V, 300 mW, -600 mA, 100 RoHS Compliant: Yes
설명
유통업체에서 제공한 onsemi BCW61BMTF에 대한 설명입니다.
BCW61 Series 32 V CE Breakdown 0.1 A PNP General Purpose Transistor - SOT-23
Trans GP BJT PNP 32V 0.1A 3-Pin SOT-23 T/R
NPN Bipolar Transistor. ONSSPCTRNSTVU6M5P;
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)-32 V
Collector Emitter Breakdown Voltage32 V
Collector Emitter Saturation Voltage-550 mV
Collector Emitter Voltage (VCEO)32 V
Current Rating-100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
hFE Min80
Max Breakdown Voltage32 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation350 mW
Voltage Rating (DC)-32 V