onsemi BC848BLT1G

ON SEMI BC848BLT1G NPN BIPOLAR TRANSISTOR, 0.1 A, 30 V, 3-PIN SOT-23

Bipolar Transistors (BJT); BC848BLT1G; ON SEMICONDUCTOR; NPN; 3; 30 V; 100 mA

30V 300mW 200@2mA,5V 100mA NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS

BC848BLT1G Series NPN 30 V 100 mA SMT General Purpose Transistor - SOT-23

Trans GP BJT NPN 30V 0.1A 300mW 3-Pin SOT-23 T/R

TRANSISTOR, NPN, 30V, 100MA, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 300mW; DC Collector Current: 100mA; DC Current Gain hFE: 200hFE;

Bipolar Transistor, Npn, 30V Sot-23, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:30V; Continuous Collector Current:100Ma; Power Dissipation:300Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi BC848BLT1G.

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 30 / DC Current Gain (hFE) = 290 / Collector-Base Voltage (Vcbo) V = 30 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 225 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 600 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900 / Reflow Temperature Max. °C = 260