공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-10-19
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonIRFIZ44NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.024Ohm;ID 31A;TO-220 Full-Pak;PD 45W;-55de
International RectifierAUIRFIZ44N
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso)ý Package
설명
유통업체에서 제공한 onsemi FQPF47P06에 대한 설명입니다.
Power MOSFET, P-Channel, QFET®, -60 V, -30 A, 26 mΩ, TO-220F
Power MOSFET, P Channel, 60 V, 30 A, 0.026 ohm, TO-220F, Through Hole
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)30 A
Current Rating-30 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance26 mΩ
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationSingle
Fall Time195 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.6 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation62 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape (CT)
Power Dissipation62 W
Rds On Max26 mΩ
Rise Time450 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time100 ns
Turn-On Delay Time50 ns
Voltage Rating (DC)-60 V
Dimensions
Height19.5 mm
Length10.16 mm
Width4.7 mm