대체 부품
Price @ 1000
$ 0.055
$ 0.052
$ 0.052
Stock
375,014
6,704,506
6,704,506
Authorized Distributors
2
6
6
Mount
-
Through Hole
Through Hole
Case/Package
TO-92
TO-92
TO-92
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
40 V
Max Collector Current
200 mA
200 mA
200 mA
Transition Frequency
250 MHz
300 MHz
300 MHz
Collector Emitter Saturation Voltage
300 mV
300 mV
300 mV
hFE Min
30
30
30
Power Dissipation
1.5 W
625 mW
625 mW
공급망
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1969-10-14
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2012-03-31
LTD Date2012-09-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
관련 부품
onsemiPN2222ANLBU
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
설명
유통업체에서 제공한 onsemi 2N3904에 대한 설명입니다.
NPN Bipolar Transistor, TO-92 40 V, 0.2 A
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-18
16 A, 140 V NPN Bipolar Power Transistor. ONSSPCTRNSTVU6M5P;
Trans GP BJT NPN 40V 0.2A 3-Pin TO-92
TO-92-3 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:625mW; DC Collector Current:200mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:200mA; Current Ic @ Vce Sat:10mA; Current Ic Continuous a Max:200mA; Current Ic Fall Time Measurement:10mA; Current Ic hFE:10mA; Fall Time @ Ic:250ns; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:100; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:b; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:500mW; Termination Type:Through Hole; Voltage Vcbo:60V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Body MaterialMetal
Case/PackageTO-92
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Gain Bandwidth Product300 MHz
hFE Min30
Max Collector Current200 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation1.5 W
Transition Frequency250 MHz
Voltage Rating (DC)40 V
Dimensions
Height10.41 mm