가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | PHT6N06T,135 | 2,040 | 498 | |||||||||
| Rochester Electronics | PHT6N06T,135 | 11,709 | 1d | |||||||||
| UnikeyIC | PHT6N06T,135 | 11,077 | 272 | Cut Tape | 2h | |||||||
| HQonline | DS0090655 | 9,368 | 100 | >1w | ||||||||
| Win Source | WS-PHT6N06T,135 | 20 | 9 | 38m |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date1997-06-01
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2014-12-31
LTD Date2015-03-31
관련 부품
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NXP SemiconductorsBSH111,215
NEXPERIA - BSH111,215 - MOSFET Transistor, N Channel, 335 mA, 55 V, 2.3 ohm, 4.5 V, 1 V
NXP SemiconductorsBUK9E15-60E,127
96W(Tc) 2.1V@1mA 20.5nC@ 5 V 1N 60V 13m¦¸@ 15A,10V 2.651nF@25V I2PAK
설명
유통업체에서 제공한 NXP Semiconductors PHT6N06T,135에 대한 설명입니다.
Trans MOSFET N-CH 55V 5.5A 4-Pin(3+Tab) SOT-223 T/R
8.3W(Tc) 4V@1mA 5.6nC@ 10 V 1N 55V 150m¦¸@ 5A,10V 175pF@25V SC-73
5.5 A 55 V 0.15 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-channel TrenchMOS standard level FET
MOSFET, N CH, 55V, 5.5A, 4-SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:55V; On Resistance Rds(on):128mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V
제조업체 별칭
NXP Semiconductors에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. NXP Semiconductors는 다음 이름으로도 알려져 있습니다:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
기술 사양
Physical
Case/PackageSOT
Contact PlatingTin
Number of Pins4
Number of Terminals4
Weight4.535924 g
Technical
Continuous Drain Current (ID)5.5 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time4.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance175 pF
Max Dual Supply Voltage55 V
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
Power Dissipation8.3 W
Rds On Max150 mΩ
Resistance150 MΩ
Rise Time14.5 ns
Turn-Off Delay Time7.8 ns
Turn-On Delay Time4.9 ns
Dimensions
Height6.35 mm
Length6.35 mm
Width6.35 mm