NXP Semiconductors MMRF1008HR5

Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
$ 481.395
Obsolete

가격 및 재고

데이터시트 및 문서

NXP Semiconductors MMRF1008HR5에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet19 페이지10년 전
Datasheet16 페이지12년 전

Freescale Semiconductor

재고 내역

3개월간의 트렌드:
+0.00%

대체 부품

Price @ 1000
$ 481.395
$ 612.64
Stock
68,867
65,965
Authorized Distributors
6
6
Mount
Screw
Screw, Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
-
110 V
Continuous Drain Current (ID)
-
-
Threshold Voltage
-
-
Rds On Max
-
-
Gate to Source Voltage (Vgs)
10 V
10 V
Power Dissipation
-
-
Input Capacitance
-
-

공급망

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00
Introduction Date2013-12-20
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2023-06-30
LTD Date2023-12-31

관련 부품

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RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827
NXP SemiconductorsMRFE6VP61K25HR5
Wideband Rf Power Ldmos Transistor, 1.8-600 Mhz, 1250 W Cw, 50 V Rohs Compliant: Yes
NXP SemiconductorsMRFE6VP6300HR5
RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827

설명

유통업체에서 제공한 NXP Semiconductors MMRF1008HR5에 대한 설명입니다.

Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
RF Power Transistor,960 to 1215 MHz, 275 W, Typ Gain in dB is 20.3 @ 1030 MHz, 50 V, LDMOS, SOT1792
Transistor RF FET N-CH 100V 900MHz to 1215MHz 2-Pin NI-780H T/R
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 110V 2-Pin NI-780H T/R
10V 2.4V 100V 695pF@ 50V NI-780H-2L 4.32mm

제조업체 별칭

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  • NXP
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  • PHIL
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  • PHI
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  • PHILIPS SEMI
  • PHL
  • PHLIPS
  • NXP Semicon
  • NXP / Freescale
  • PHILL
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  • Philips Semiconducto
  • PHILLIP
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  • Philips Semiconductors
  • NXP Semiconductors NV
  • NXP