대체 부품
Price @ 1000
$ 0.258
Stock
21,632
859,325
Authorized Distributors
0
6
Mount
Through Hole
Through Hole
Case/Package
-
TO-220AB
Drain to Source Voltage (Vdss)
-
55 V
Continuous Drain Current (ID)
17 A
17 A
Rds On Max
-
70 mΩ
Collector Emitter Breakdown Voltage
-
-
Max Collector Current
-
-
Transition Frequency
-
-
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-02-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2007-06-30
LTD Date2007-12-31
설명
유통업체에서 제공한 NXP Semiconductors IRFZ24N에 대한 설명입니다.
Power Field-Effect Transistor, 17A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
17 A 55 V 0.07 ohm N-CHANNEL Si POWER MOSFET TO-220AB
N-channel enhancement mode TrenchMOS transistor
IRFZ24N PHILIPS
제조업체 별칭
NXP Semiconductors에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. NXP Semiconductors는 다음 이름으로도 알려져 있습니다:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
기술 사양
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Resistance70 mΩ
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance370 pF
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Rise Time34 ns
Turn-Off Delay Time19 ns
Turn-On Delay Time4.9 ns
Voltage Rating (DC)55 V
Dimensions
Height8.77 mm
Length10.54 mm
Width4.69 mm