가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | AFT09MS031NR1CT-ND | 398 | 1 | Cut Tape | ||||||||
| Newark | AFT09MS031NR1 | 0 | 500 | Cut Tape | ||||||||
| RFMW | AFT09MS031NR1 | 0 | 1 | 13h | ||||||||
| Avnet | AFT09MS031NR1 | 0 | 500 | 14h | ||||||||
| Future Electronics | AFT09MS031NR1 | 0 | 500 | Tape & Reel |
공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00
Introduction Date2012-05-25
Lifecycle StatusEOL (Last Updated: 1 week ago)
LTB Date2026-09-30
LTD Date2027-09-30
관련 부품
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RF Power Transistor, 0.0018 to 0.52 GHz, 31 W, 17.7 dB, 13.6 V, SOT1732, LDMOS
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Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V
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Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
설명
유통업체에서 제공한 NXP Semiconductors AFT09MS031NR1에 대한 설명입니다.
AFT09MS Series 40 V 870 MHz N-Channel RF Power LDMOS Transistor - TO-270-2
Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V, FM2F
NXP Semiconductors SCT
RF Power Transistor, 0.0018 to 0.941 GHz, 31 W, Typ. Gain in dB is 17.2 @ 870 MHz, 13.6 V, LDMOS, SOT1732-1
RF FET Transistor, 40 VDC, 31 W, 136 MHz, 520 MHz, TO-270
317W 12V 2.6V 40V 140pF@ 13.6V TO-270-2 2.08mm
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET
Trans RF FET N-CH 40V 3-Pin TO-270 T/R
RF FET, 40V, 764MHZ-941MHZ, TO-270
RF FET, 40V, 764MHZ-941MHZ, TO-270; Drain Source Voltage Vds: 40V; Continuous Drain Current Id: -; Power Dissipation Pd: 317W; Operating Frequency Min: 764MHz; Operating Frequency Max: 941MHz; RF Transistor Case: TO-270; No. o
제조업체 별칭
NXP Semiconductors에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. NXP Semiconductors는 다음 이름으로도 알려져 있습니다:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
기술 사양
Physical
Case/PackageTO-270-2
Contact PlatingTin
MountSurface Mount
Number of Terminals2
Weight529.540742 mg
Technical
Drain to Source Voltage (Vdss)40 V
Frequency870 MHz
Gain17.2 dB
Gate to Source Voltage (Vgs)12 V
Max Operating Temperature150 °C
Max Power Dissipation317 W
Min Breakdown Voltage40 V
Min Operating Temperature-40 °C
Number of Elements1
Output Power31 W
Test Current500 mA
Test Voltage13.6 V
Voltage Rating40 V