유통업체에서 제공한 NXP Semiconductors MW6S010GNR1에 대한 설명입니다.
RF Power Transistor,450 to 1500 MHz, 10 W, Typ Gain in dB is 18 @ 960 MHz, 28 V, LDMOS, SOT1731
Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V, FM2
NXP Semiconductors SCT
Transistor RF FET N-CH 68V 450MHz to 1500MHz 3-Pin TO-270 T/R
Avnet Japan
SOT1731,Reel 13 Q2/T3 in Drypack,RF MOSFET LDMOS 28V TO270-2
RF FET Transistor, 68 VDC, 450 MHz, 1500 MHz, TO-270
61.4W 12V 1N 68V 10A 23pF@ 28V TO-270-2 2.24mm
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA
TRIMMER 20K OHM 0.5W PC PIN SIDE
RF L BAND, N-CHANNEL POWER MOSFE
RF MOSFET LDMOS 28V TO270-2 GULL
RF POWER MOSFET, LATERAL N-CH BROADBAND, 68V, TO-270-2 GULL; Transistor Type:RF FET; Drain Source Voltage Vds:68V; Power Dissipation Pd:10W; Operating Frequency Range:450MHz to 1500MHz; Operating Temperature Range:-10°C to +150°C ;RoHS Compliant: Yes