NTE Electronics NTE3311

Name: NTE Electronics NTE3311
Brand: NTE Electronics
SKU: NTE3311

Igbt N-channel Enhancement 600V IC=25A TO-3P Case High Speed Switch

$ 9.785

Obsolete

제조업체 페이지 데이터시트

가격 및 재고

공인 유통업체

비공인 재고 유통업체

비공인 딜러

모든 가격 할인 보기

Distributor	SKU		Min	Pkg
Arrow Electronics	NTE3311	22	10			9.785	9.785	9.785	9.785
Verical	NTE3311	22	10			9.785	9.785	9.785	9.785
RS (Formerly Allied Electronics)	NTE3311	0	1	Bulk	11.120	11.120	11.120	11.120	11.120	3h
Microchip USA	NTE3311	241	50	Tray			39.312	39.312	39.312	3d
Easev	NTE3311	917			4.816	4.816	4.575	4.190	3.467	5d

재고 내역

3개월간의 트렌드:

+0.00%

Powered by

공급망

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-02-05

Lifecycle StatusObsolete (Last Updated: 4 months ago)

관련 부품

STMicroelectronicsSTGP7NC60HD

Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220

세부 사항

STMicroelectronicsSTGP14NC60KD

Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220

세부 사항

RenesasRJH60D2DPP-M0#T2

IGBT 600V 25A 27.2W TO220FL / Trans IGBT Chip N-CH 600V 25A 34000mW 3-Pin(3+Tab) TO-220FL Tube

세부 사항

InfineonIRG6IC30UPBF

Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB

세부 사항

RenesasRJH60V2BDPP-M0#T2

IGBT 600V 25A 34W TO-220FL

세부 사항

STMicroelectronicsSTGD18N40LZ-1

Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

세부 사항

설명

유통업체에서 제공한 NTE Electronics NTE3311에 대한 설명입니다.

Igbt N-channel Enhancement 600V IC=25A TO-3P Case High Speed Switch

NTE Electronics

Trans IGBT Chip N-CH 600V 25A 150W 3-Pin(3+Tab) TO-3P

Verical

Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel

IHS

replacement Transistors IGBT 600V, 15A

Mouser

Igbt, Single, N-Ch, 600V, 25A, To-247; Continuous Collector Current:25A; Collector Emitter Saturation Voltage:3V; Power Dissipation:150W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C; Msl:- Rohs Compliant: No |Nte Electronics NTE3311

Newark