공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 2 months ago)
관련 부품
STMicroelectronicsSTGP14NC60KD
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220
onsemiSGP23N60UFDTU
IGBT 600V 23A 100W TO220 / Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220 Tube
STMicroelectronicsSTGP10NC60KD
Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 20A 65W TO220
STMicroelectronicsSTGP10NC60HD
STGP10NC60HD Series N-Channel 600 V 10 A Very Fast IGBT Flange Mount - TO-220
InfineonIKP10N60TXKSA1
Trans IGBT Chip N-CH 600V 24A 110mW Automotive 3-Pin(3+Tab) TO-220AB Tube
설명
유통업체에서 제공한 STMicroelectronics STGP7NC60HD에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220
STMICROELECTRONICS STGP7NC60HD IGBT Single Transistor, 25 A, 2.5 V, 80 W, 600 V, TO-220, 3 Pins
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
STGP7NC60HD Series N-Channel 600 V 25 A Very Fast PowerMESH IGBT - TO-220
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, 600V, 7A, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Ope
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.299997 g
Technical
Collector Base Breakdown Voltage (VCES)600 V
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.7 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current14 A
Continuous Drain Current (ID)14 A
Current Rating14 A
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Forward Current20 A
Forward Voltage1.3 V
Max Collector Current25 A
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation80 W
Reverse Recovery Time37 ns
Rise Time7 ns
Turn-Off Delay Time72 ns
Turn-On Delay Time18.5 ns
Voltage Rating (DC)600 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm