공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-03-14
Lifecycle StatusObsolete (Last Updated: 5 months ago)
관련 부품
STMicroelectronicsSTW42N65M5
N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-247 package
InfineonIPW60R099C6FKSA1
Power MOSFET, N Channel, 650 V, 37.9 A, 99 Milliohms, TO-247, 3 Pins, Through Hole
설명
유통업체에서 제공한 NTE Electronics NTE2376에 대한 설명입니다.
Power Mosfet N-channel 200V Id=30A TO-247 Case High Speed Switch Enhancement Mode Rds=0.085 Ohm
NTE Electronics
Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247
replacement Transistors TO-247 N-CH 200V 30A
Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
N Channel Mosfet, 200V, 30A, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.085Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:-Rohs Compliant: Yes
제조업체 별칭
NTE Electronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. NTE Electronics는 다음 이름으로도 알려져 있습니다:
- NTE
- NTE Electronics Inc
- NTE ELECT
- NTE Electronics Incorporated
- NTE ELECTRONICS ACCT
- NTE Electronic Inc
- NTE/EDGE
- NTE/PHILIPS ECG
- NTE 88'S
- PROSPERITY ELECTRONICS CO LTD
- NTE/PEC
- NTE Electronics Inc (use ECG / NTE Electronics)
- NTE-F
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight72.574779 g
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time62 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation190 W
Rise Time86 ns
Threshold Voltage4 V
Turn-Off Delay Time70 ns
Turn-On Delay Time16 ns
Dimensions
Height19.9898 mm
Length15.875 mm
Width5.0038 mm