대체 부품
Price @ 1000
$ 0.05
$ 0.05
Stock
1,372,336
1,769,623
1,769,623
Authorized Distributors
0
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-363
TSSOP
TSSOP
Polarity
NPN, PNP
NPN, PNP
NPN, PNP
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
230 MHz
230 MHz
230 MHz
Collector Emitter Saturation Voltage
150 mV
150 mV
150 mV
hFE Min
80
80
80
Power Dissipation
200 mW
-
-
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-04-22
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
InfineonBCR141SH6327XTSA1
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
InfineonBCR183SH6327XTSA1
BCR183 Series PNP 50 V 100 mA SMT Silicon Digital Transistor - SOT-363-6
InfineonBCR129SH6327XTSA1
BCR129 Series NPN 50 V 100 mA SMT Silicon Digital Transistor - SOT-363-6
Diodes Inc.DDC114EU-7-F
Bipolar Pre-Biased / Digital Transistor, Dual NPN, 50 V, 100 mA, 10 kohm, 10 kohm
Diodes Inc.DCX114EU-13R-F
Pre-Biased Transistor (Dual) 300mV@500µA,10mA 1 NPN, 1 PNP 200mW 500nA 50V 100mA SOT-363 SMD
설명
유통업체에서 제공한 Nexperia PUMD48에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN and PNP
100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
NPN/PNP resistor-equipped transistors
TRANSISTOR, DIGITAL, DUAL, SOT-363; Module Configuration:Dual; Transistor Polarity:NPN / PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:150mV; Continuous Collector Current Ic Max:100A; Current Ic Continuous a Max:100A; Current Ic hFE:5mA; Full Power Rating Temperature:25°C; Hfe Min:80; No. of Transistors:2; Package / Case:SOT-363; Power Dissipation Pd:200mW; Power Dissipation Ptot Max:300mW; Resistance R1:47kohm; Resistance R1 PNP:2.2kohm; Resistance R2:47kohm; Resistance R2 PNP:47kohm; Termination Type:SMD; Transistor Type:Bias Resistor (BRT); Voltage Vcbo:50V
제조업체 별칭
Nexperia에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Nexperia는 다음 이름으로도 알려져 있습니다:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- Infineon_Nexperia
- NEXPERIA (FORMERLY NXP) (4001801)
기술 사양
Physical
Case/PackageSOT-363
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage150 mV
Collector Emitter Voltage (VCEO)50 V
Emitter Base Voltage (VEBO)10 V
hFE Min80
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements2
PackagingCut Tape
PolarityNPN, PNP
Power Dissipation200 mW
Transition Frequency230 MHz
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm