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Price @ 1000
$ 0.054
$ 0.058
Stock
1,222,642
5,057,916
Authorized Distributors
6
4
Mount
Surface Mount
Surface Mount
Case/Package
TSSOP
TSSOP
Polarity
NPN, PNP
NPN, PNP
Collector Emitter Breakdown Voltage
50 V
50 V
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
150 mV
-
hFE Min
60
60
Power Dissipation
-
-
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-09-01
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 3 years ago)
설명
유통업체에서 제공한 Nexperia PUMD2,115에 대한 설명입니다.
50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin TSSOP T/R
Bipolar Transistors (BJT); PUMD2,115; NEXPERIA; NPN, PNP; 6; 50 V; 100 mA
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
PUMD2 Series 40/10 V 100 mA Surface Mount NPN/PNP Digital Transistor - SOT-363
100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
TRANS PREBIAS 1NPN 1PNP 6TSSOP / Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP
Nexperia NPN/PNPdigital transistor, UMTencapsulation, SMD mount, Maximum DC collector current100 mA, maximum collector-emission voltage50 V
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN & PNP; Collector Emitter Voltage, V(br)ceo:50V; Power Dissipation, Pd:200mW; DC Collector Current:100mA; DC Current Gain Max (hfe):60 ;RoHS Compliant: Yes
TRANSISTOR, DIGITAL, DUAL, SOT-363; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 22kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: PUMD2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 150mV; Continuous Collector Current Ic Max: 100A; Current Ic Continuous a Max: 100A; Current Ic hFE: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 60hFE; Full Power Rating Temperature: 25°C; Hfe Min: 60; Module Configuration: Dual; No. of Pins: 6Pins; No. of Transistors: 2; Operating Temperature Max: 150°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Power Dissipation Pd: 200mW; Power Dissipation Ptot Max: 300mW; Resistance R1: 22kohm; Resistance R2: 22kohm; Transistor Case Style: SOT-363; Transistor Polarity: NPN, PNP
제조업체 별칭
Nexperia에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Nexperia는 다음 이름으로도 알려져 있습니다:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
기술 사양
Physical
Case/PackageTSSOP
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight4.535924 g
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage150 mV
Collector Emitter Voltage (VCEO)50 V
Element ConfigurationDual
Emitter Base Voltage (VEBO)10 V
hFE Min60
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-65 °C
Number of Elements2
PolarityNPN, PNP
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책