공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-09-08
Lifecycle StatusProduction (Last Updated: 8 months ago)
관련 부품
InfineonBSS316NH6327XTSA1
Power MOSFET, N Channel, 30 V, 1.4 A, 160 mOhm, SOT-23, 3 Pins, Surface Mount
InfineonBSS806NH6327XTSA1
Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.041ohm; 0.5W; -55+150 deg.C; SMD; SOT23; AEC-Q100
설명
유통업체에서 제공한 Nexperia PMV160UP에 대한 설명입니다.
Nexperia PChannel EnhancedMOSTube, Vds=20 V, 1.2 A, SOT-23encapsulation, surface mount, 3Pin
MOSFET, P-CHANNEL, -20V, -1.2A, SOT-23-3
1200 mA 20 V P-CHANNEL Si SMALL SIGNAL MOSFET TO-236AB
Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
제조업체 별칭
Nexperia에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Nexperia는 다음 이름으로도 알려져 있습니다:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- Infineon_Nexperia
- NEXPERIA (FORMERLY NXP) (4001801)
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1.2 A
Drain to Source Resistance210 mΩ
Drain to Source Voltage (Vds)-20 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)8 V
Input Capacitance365 pF
Max Operating Temperature150 °C
Max Power Dissipation2.17 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Threshold Voltage-700 mV
Turn-Off Delay Time35 ns
Turn-On Delay Time7 ns
Dimensions
Height1 mm
Length3 mm
Width1.4 mm