공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-04-16
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
관련 부품
NXP SemiconductorsPBSS5140V,115
Tape & Reel (TR) Surface Mount PNP SINGLE Bipolar (BJT) Transistor 300 @ 100mA 5V 1A 500mW 150MHz
NXP SemiconductorsPBSS4140V,115
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
설명
유통업체에서 제공한 Nexperia PEMB13,115에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Trans Digital BJT PNP 50V 100mA 6-Pin SOT-666 T/R - Tape and Reel
PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
100 mA 50 V 2 CHANNEL PNP Si SMALL SIGNAL TRANSISTOR
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47kohm; Resistor Ratio, R1/R2:10 ;RoHS Compliant: Yes
TRANS PNP/PNP 50V 0.1A SOT666; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Power Dissipation Pd:300mW; DC Collector Current:-100mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-666; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-100mV; Current Ic Continuous a Max:-5mA; Hfe Min:100; Package / Case:SOT-666; Power Dissipation Pd:300mW; Termination Type:SMD
제조업체 별칭
Nexperia에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Nexperia는 다음 이름으로도 알려져 있습니다:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
기술 사양
Physical
Case/PackageSOT-666
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight4.535924 g
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Voltage (VCEO)50 V
Element ConfigurationDual
hFE Min100
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-65 °C
Number of Elements2
PolarityPNP
Power Dissipation300 mW
TerminationSMD/SMT
Transition Frequency180 MHz
Dimensions
Height6.35 mm
Length6.35 mm
Width6.35 mm